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IG20.

A 5keV Argon or Oxygen ion source for UHV surface analysis applications

0.5–5 keV
Beam energy
100 µm
Spot size
4.5 mA/cm²
Maximum current density
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IG20 argon and oxygen ion gun
IG20 · Surface analysis (SIMS)

Overview.

The IG20 features a high brightness electron impact gas ion source which is designed specifically for oxygen capability but is also suitable for use with inert and other gases.

The IG20 is designed as primary ion beam for SIMS, Auger and XPS applications for imaging and depth profiling, however, the internally generated raster scan and wide range of operating parameters make it suitable for sample cleaning and surface science experiments. Twin user switchable filaments ensure continued operation in the case of a blown filament – which may be replaced at the user’s convenience.

Typical applications

Thin Films Optical CoatingElectronic MaterialsNuclear Materials

Key Features.

  • Intense ion beam with 100 µm spot size and energies from 0.5 – 5 keV
  • High current density, up to 4.5 mA/cm²
  • Electron impact ion source with Argon and Oxygen capability
  • Steering optics for line scattering and beam rastering in depth profiling
  • 3° offset in the ion gun column for optimum rejection of neutrals
  • Beam blanking facility for rapid beam switching in rastering applications
  • Source differential pumping for reduced chamber gas load
  • Easily replaceable twin filament assembly
  • Sweep rates down to 64 µs
  • Integrated operation with SIM and EQS probes for direct raster rate / area control

Downloads.

Hiden's published documents for this instrument.

Hiden SIMS – Analytical Secondary Ion Mass Spectrometry Products pdf AP0811 – Challenges and prospects for developing CdS/CdTe substrate solar cells on Mo foils pdf AP0128 – Magnesium Nitride Phase Formation Through New Ion Beam Implantation Technique pdf Mass Spectrometers for Surface Analysis pdf SIMS Applications pdf

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  • IG5C

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  • SIMS Workstation

    High performance static and dynamic SIMS for surface composition analysis and depth profiling, with SNMS for quantification in thin film measurements.

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