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IMP-EPD.

A differentially pumped, ruggedized secondary ion mass spectrometer for end point detection in the ion beam etch process.

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Hiden IMP-EPD
IMP-EPD · Thin films, plasma and surface engineering

Overview.

The IMP-EPD is a differentially pumped, ruggedized secondary ion mass spectrometer for the analysis of secondary ions and neutrals from the ion beam etch process. The system includes integrated software with process specific algorithms developed for optimum process control.

The IMP-EPD system is process proven for the production of high specification thin film devices, for applications including magnetic thin films, high temperature superconductors and III-V semiconductors.

During milling, ions with a mass characteristic of the material to be etched are monitored, and their rapid response to step changes in signal intensity provides for precise determination of end points and material interfaces.

Typical applications

End point analysisTarget impurity determinationQuality control and SPCResidual gas analysisLeak detectionMagnetic thin filmsHigh temperature superconductorsIII-V semiconductors

Key Features.

  • Automatic end point detection
  • High resolution end point, down to less than 0.5 nm
  • Ruggedized for processing
  • High sensitivity SIMS analysis
  • Integrated residual gas analyzer mode for process chamber vacuum diagnostics
  • Rising and falling edge algorithms
  • Layer counting for end point on a selected interface in a multilayered stack
  • End point relative to a reference peak
  • Automatic signal correction due to wafer rotation

Specifications.

Control software
MASsoft Professional
End point resolution
Down to less than 0.5 nm

Downloads.

Hiden's published documents for this instrument.

Thin films, plasma and surface engineering product catalog pdf

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