ToF-qSIMS Workstation.

A time of flight quadrupole SIMS system offering static ToF-SIMS capabilities and high dynamic range depth profiling from the quadrupole SIMS.

6 to 10 000 amu
Maximum mass range
Hiden ToF-qSIMS Workstation
ToF-qSIMS Workstation · Surface analysis (SIMS)

Overview.

The ToF-qSIMS Workstation is designed for surface analysis and depth profiling applications of a wide range of materials, including polymers, pharmaceuticals, superconductors, semiconductors, alloys, optical and functional coatings and dielectrics, with measurement of trace components to sub-ppm levels.

The system includes a multi-port UHV chamber, ToF-SIMS analyzer, Hiden’s MAXIM quadrupole SIMS analyzer, IG20 gas primary ion gun, a Cs metal ion gun and a sample holder designed to accommodate the broadest sample range.

A high sensitivity SNMS mode is included for quantitative analysis of metallurgical thin films, conductive and non-conductive oxides and other alloy materials and coatings. Oxygen flood, electron charge neutralization and vacuum bakeout are included as standard, and the ToF-qSIMS capability enables hyperspectral imaging for spatially resolved materials analysis.

Typical applications

Surface analysisThin film and surface engineeringSurface scienceNanotechnologyFuel cellsContamination and surface condition studies in semiconductor, adhesives, thin film coatings and pharmaceutical industriesFailure analysis, where a coating or substrate has failed in service due to corrosion, mechanical failure or a manufacturing defectReverse engineering of products where species are unknown

Key Features.

  • Fully integrated and optimized for high performance SIMS analysis
  • Dual column qSIMS and ToF SIMS analyzers
  • qSIMS analyzer for dynamic SIMS, featuring high dynamic range depth profiling
  • ToF-SIMS analyzer for static SIMS, enabling top monolayer specificity
  • Hyperspectral imaging and depth profiling for rapid determination of spatial distributions
  • Mass range 6 to 10 000 amu and 1500 FWHM resolution
  • IG20 primary gas ion gun for enhanced secondary ion emissions for SIMS
  • Hiden Cs metal ion gun for dynamic and static SIMS

Specifications.

Analyzer
Dual column qSIMS and ToF SIMS analyzers
Mass range options
6 to 10 000 amu
Detection limit
Trace components measured to sub-ppm levels
Ionization
Dynamic SIMS (qSIMS analyzer) and static SIMS (ToF-SIMS analyzer)
Format
Integrated system with a multi-port UHV chamber
Control software
Hiden MASsoft Professional and SIMS Mapper
Mass resolution
1500 FWHM
Primary ion sources
IG20 gas primary ion gun and Hiden Cs metal ion gun
SNMS
High sensitivity SNMS mode included
SIMS enhancement
Oxygen flood, electron charge neutralization and vacuum bakeout included as standard
Imaging
Hyperspectral imaging and depth profiling

Downloads.

Hiden's published documents for this instrument.

Related instruments.

  • SIMS Workstation

    High performance static and dynamic SIMS for surface composition analysis and depth profiling, with SNMS for quantification in thin film measurements.

  • Compact SIMS

    A SIMS tool designed for fast and reliable characterization of layer structures, surface contamination and impurities, with sensitive positive ion detection.

  • AutoSIMS

    A self-contained automated SIMS tool for routine and repetitive surface analysis of thin films, contamination and doping, in conductive and insulating material.

  • Dual Polarity SIMS Workstation

    The Dual Polarity SIMS Workstation simultaneously detects positive and negative ions using two opposing EQS spectrometers. Designed for ultra-thin layer analysis and battery research, it is ideal for studying materials such as the solid electrolyte interphase (SEI) layer.

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